EP1K30TI144-2N vs EP1K30TI144-2 Comparaison
Comparaison détaillée côte à côte de EP1K30TI144-2N par Intel et EP1K30TI144-2 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP1K30TI144-2N | EP1K30TI144-2 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,00 | $13,85 |
| Series | ACEX-1K | EP1K30 |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements / Cells | 1728 | 1728 |
| Typical Gate Count | 30,000 gates | — |
| Embedded Memory (RAM bits) | 24,576 bits | — |
| Maximum User I/O | 102 | — |
| Number of Logic Array Blocks (LABs) | [DATA_NEEDED: LAB count] | 216 |
| Number of Embedded Array Blocks (EABs) | [DATA_NEEDED: EAB count] | — |
| Core Voltage (VCCINT) | 2.5 V | — |
| I/O Voltage (VCCIO) | 2.5 V / 3.3 V | — |
| Process Technology | 0.22 µm CMOS SRAM | 0.22 µm CMOS, SRAM-based |
| Speed Grade | -2 | -2 (mid-tier) |
| Operating Temperature Grade | Industrial | — |
| Plage de température de fonctionnement | -40 °C to +100 °C ambient | — |
| Boîtier | 144-pin LQFP | 144-LQFP (TQFP), 22 mm × 22 mm, 0.5 mm pitch |
| Lead Pitch | 0.5 mm | — |
| Type de montage | Surface Mount | Surface Mount |
| Configuration Interface | JTAG (IEEE 1149.1), serial passive/active | — |
| Statut RoHS | Compliant (per Utmel product note) | [DATA_NEEDED: RoHS compliance - legacy part] |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Family | — | ACEX-1K |
| Total RAM Bits | — | 24576 |
| Equivalent Gates | — | 30,000 |
| User I/O Count | — | 102 |
| Number of I/O Banks | — | 4 |
| Supply Voltage - Core | — | 2.5 V (2.375 V min, 2.625 V max) |
| Supply Voltage - I/O | — | 2.5 V / 3.3 V / 5.0 V (multiVolt) |
| Maximum Internal Frequency | — | 200 MHz |
| Embedded Memory Type | — | Dual-port EAB (Embedded Array Block) |
| Température de fonctionnement | — | -40 °C to +85 °C (Industrial, "I" suffix) |
| Configuration Method | — | SRAM, requires external configuration PROM (EPC) |
| Programming Interface | — | JTAG (IEEE 1149.1) / IEEE 1532 ISP |