EP2S180F1020C3 vs EP2S180F1020I4 Comparaison
Comparaison détaillée côte à côte de EP2S180F1020C3 par Intel et EP2S180F1020I4 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP2S180F1020C3 | EP2S180F1020I4 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1 280,00 | $11 250,00 |
| Series | Stratix II | Stratix II |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | — |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| Boîtier | 1020-ball FBGA (flip-chip BGA) | 1020-BBGA, FC-FBGA (Flip-Chip FineLine BGA) |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | C3 | — |
| Température de fonctionnement | Commercial (0C to +85C) | -40C to +100C (Industrial grade, "I4" suffix) |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | Passive serial, Active serial, Fast passive parallel, JTAG |
| Development Toolchain | Quartus II / Quartus Prime | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Family | — | Stratix II (EP2S180) |
| Logic Elements | — | 179,400 |
| Number of LABs/CLBs | — | 8,970 |
| Total RAM Bits | — | 9,383,040 (8,979,840 per alternate sources) |
| Number of I/O | — | 742 |
| Number of DSP Blocks | — | [DATA_NEEDED: DSP block count per Stratix II EP2S180 datasheet - typically 12] |
| Number of PLLs | — | [DATA_NEEDED: PLL count per EP2S180 datasheet] |
| Core Voltage (VCCINT) | — | 1.2 V |
| Process Technology | — | 90 nm CMOS |
| Maximum Operating Frequency | — | 711.24 MHz |
| Niveau MSL | — | [DATA_NEEDED: MSL rating from Altera packaging spec] |
| Lead-Free | — | Yes |
| Configuration Memory Type | — | SRAM (volatile; requires external configuration device) |
| Supplier Device Package | — | 1020-FBGA |
| Base Part Number | — | EP2S180 |