EP2S180F1020C3 vs EP2S180F1020I4 Comparação
Comparação detalhada lado a lado de EP2S180F1020C3 por Intel e EP2S180F1020I4 por Intel. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | EP2S180F1020C3 | EP2S180F1020I4 |
|---|---|---|
| Marca | Intel | Intel |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Obsolete | Obsolete |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1.280,00 | $11.250,00 |
| Series | Stratix II | Stratix II |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | — |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| Encapsulamento | 1020-ball FBGA (flip-chip BGA) | 1020-BBGA, FC-FBGA (Flip-Chip FineLine BGA) |
| Tipo de montagem | Surface Mount | Surface Mount (BGA) |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | C3 | — |
| Temperatura de operação | Commercial (0C to +85C) | -40C to +100C (Industrial grade, "I4" suffix) |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | Passive serial, Active serial, Fast passive parallel, JTAG |
| Development Toolchain | Quartus II / Quartus Prime | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Family | — | Stratix II (EP2S180) |
| Logic Elements | — | 179,400 |
| Number of LABs/CLBs | — | 8,970 |
| Total RAM Bits | — | 9,383,040 (8,979,840 per alternate sources) |
| Number of I/O | — | 742 |
| Number of DSP Blocks | — | [DATA_NEEDED: DSP block count per Stratix II EP2S180 datasheet - typically 12] |
| Number of PLLs | — | [DATA_NEEDED: PLL count per EP2S180 datasheet] |
| Core Voltage (VCCINT) | — | 1.2 V |
| Process Technology | — | 90 nm CMOS |
| Maximum Operating Frequency | — | 711.24 MHz |
| Nível MSL | — | [DATA_NEEDED: MSL rating from Altera packaging spec] |
| Lead-Free | — | Yes |
| Configuration Memory Type | — | SRAM (volatile; requires external configuration device) |
| Supplier Device Package | — | 1020-FBGA |
| Base Part Number | — | EP2S180 |