EP2SGX30CF780I4N vs EP2SGX30CF780C7 Comparaison
Comparaison détaillée côte à côte de EP2SGX30CF780I4N par Intel et EP2SGX30CF780C7 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP2SGX30CF780I4N | EP2SGX30CF780C7 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | NRND | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $138,00 | $171,00 |
| Family | Stratix II GX | — |
| Logic Elements | 33,880 | 33,000 |
| Logic Cells / CLBs | 33,880 | — |
| Process Technology | 90 nm CMOS | 90 nm |
| Core Supply Voltage | 1.15 V to 1.25 V | — |
| Maximum Internal Frequency | 622.08 MHz | — |
| Embedded Transceivers | 4 channels (up to 3.125 Gbps at C4) | — |
| Boîtier | 780-ball FC-FBGA, 29 x 29 mm, 1.0 mm pitch | 780-ball FineLine BGA (CF780) |
| Pin / Terminal Count | 780 | — |
| Température de fonctionnement | -40C to +85C (Industrial) | 0C to +85C (commercial) |
| Type de montage | Surface Mount (BGA) | — |
| Lead-Free | Yes | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free Fineline BGA) |
| Type de mémoire | Embedded SRAM, external DDR/DDR2/QDR support | — |
| Configuration | JTAG / passive serial / fast passive parallel | — |
| Series | — | Stratix II GX |
| Embedded Memory | — | 1.9 Mbits |
| DSP Blocks (18x18 multipliers) | — | 256 |
| Maximum User I/O | — | 361 |
| Multi-Gigabit Transceivers | — | 4 channels |
| Transceiver Data Rate | — | 600 Mbps to 3.125 Gbps |
| PLLs | — | 4 |
| Core Voltage | — | 1.2 V |
| Ball Pitch | — | 1.0 mm |
| Speed Grade | — | C7 (fastest commercial) |
| Configuration Modes | — | Passive Serial, Fast Passive Parallel, Passive Parallel Asynchronous, JTAG |