EP4CE75F23I7N vs EP4CGX110CF23I7 Comparaison
Comparaison détaillée côte à côte de EP4CE75F23I7N par Intel et EP4CGX110CF23I7 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP4CE75F23I7N | EP4CGX110CF23I7 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $118,00 | $338,55 |
| Product Line | Cyclone IV E | — |
| Family | Cyclone IV E (EP4CE) | Cyclone IV GX |
| Logic Elements (LEs) | 75,408 | — |
| Logic Array Blocks (LABs) | 4,713 | — |
| Embedded Memory Bits | 2,810,880 bits (312 M9K blocks) | 5,621,760 bits |
| Distributed RAM Bits | 200 Kbits | — |
| Embedded 18x18 Multipliers | 15 | 66 |
| PLLs | 4 | 8 |
| Global Clocks | [DATA_NEEDED: global clock network count] | — |
| Maximum User I/Os | 292 | — |
| Core Voltage (VCCINT) | 1.2 V nominal | 1.2 V |
| I/O Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) | — |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power |
| Boîtier | 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch) | 484-pin FBGA (F23) |
| Operating Temperature Grade | Industrial (I7: -40C to +100C Tj) | — |
| Configuration Modes | Active Serial (AS), Passive Serial (PS), JTAG | — |
| External Memory Interfaces | DDR / DDR2 SDRAM, QDRII SRAM | — |
| Design Software | Quartus II / Quartus Prime | — |
| Statut RoHS | Compliant | Compliant |
| Logic Elements (LE) | — | 109,424 |
| Logic Array Blocks (LAB) | — | [DATA_NEEDED: LAB count] |
| M9K Memory Blocks | — | [DATA_NEEDED: M9K block count] |
| User I/O | — | 270 |
| Transceivers | — | 8 channels up to 3.125 Gbps |
| Température de fonctionnement | — | -40C to +100C (industrial) |
| Lead-Free | — | Yes |