EPF10K100EFC484-1N vs EPF10K100EFC484-3N Comparaison
Comparaison détaillée côte à côte de EPF10K100EFC484-1N par Intel et EPF10K100EFC484-3N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EPF10K100EFC484-1N - 100K FLEX 10KE FPGA, 338 I/O, 484-BGA | Intel
EPF10K100EFC484-1N ObsoleteComparaison des spécifications
| Paramètre | EPF10K100EFC484-1N | EPF10K100EFC484-3N |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $158,00 | $142,00 |
| Manufacturer | Intel (formerly Altera) | — |
| Series | FLEX 10KE | — |
| Device Type | Field Programmable Gate Array (FPGA) | — |
| Logic Elements / Cells | 4,992 | 4992 |
| Equivalent Gates | 100,000 | — |
| Embedded Memory Bits | 49,152 bits | — |
| Number of LABs | 624 | — |
| Number of Logic Elements | 4,992 | — |
| User I/Os | 338 | 338 |
| Nombre de broches | 356 (BGA-356 per one source) / 484 (BGA-484 per other sources) | — |
| Boîtier | 484-BBGA (FineLine BGA) | 484-ball FineLine BGA (FC484 / FBGA-484) |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Logic Family | CMOS | — |
| Process Technology | 0.22 µm CMOS SRAM | 0.22 µm CMOS |
| Core Supply Voltage | 2.5 V | — |
| I/O Supply Voltage | 3.3 V (5 V-tolerant inputs via VCCIO) | — |
| Propagation Delay (worst case) | 0.6 ns | — |
| Température de fonctionnement | 0 °C to 70 °C (commercial) | — |
| Configuration | SRAM-based, in-system reprogrammable | — |
| JTAG / IEEE 1149.1 | Yes | — |
| Statut RoHS | compliant (lead-free FBGA) | — |
| Statut du cycle de vie | Obsolete (NRND per Intel/Altera PCN history) | — |
| Family | — | FLEX 10KE |
| Total Gates | — | 100,000 |
| Embedded Memory (EAB) | — | 49,152 bits (12 EABs) |
| Logic Array Blocks (LABs) | — | 624 |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | — | 200 MHz |
| Speed Grade | — | -3 (fastest commercial bin) |
| Temperature Grade | — | Commercial (0 °C to +70 °C) |
| Configuration Method | — | SRAM (external EPROM/Flash/JTAG required at power-up) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free) |