EPF10K100EFC484-1N vs EPF10K100EFC484-3N Сравнение
Подробное сравнение бок о бок EPF10K100EFC484-1N от Intel и EPF10K100EFC484-3N от Intel. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Intel
EPF10K100EFC484-1N - 100K FLEX 10KE FPGA, 338 I/O, 484-BGA | Intel
EPF10K100EFC484-1N ObsoleteСравнение характеристик
| Параметр | EPF10K100EFC484-1N | EPF10K100EFC484-3N |
|---|---|---|
| Бренд | Intel | Intel |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Obsolete | Obsolete |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $158,00 | $142,00 |
| Manufacturer | Intel (formerly Altera) | — |
| Series | FLEX 10KE | — |
| Device Type | Field Programmable Gate Array (FPGA) | — |
| Logic Elements / Cells | 4,992 | 4992 |
| Equivalent Gates | 100,000 | — |
| Embedded Memory Bits | 49,152 bits | — |
| Number of LABs | 624 | — |
| Number of Logic Elements | 4,992 | — |
| User I/Os | 338 | 338 |
| Количество выводов | 356 (BGA-356 per one source) / 484 (BGA-484 per other sources) | — |
| Корпус | 484-BBGA (FineLine BGA) | 484-ball FineLine BGA (FC484 / FBGA-484) |
| Тип монтажа | Surface Mount | Surface Mount (BGA) |
| Logic Family | CMOS | — |
| Process Technology | 0.22 µm CMOS SRAM | 0.22 µm CMOS |
| Core Supply Voltage | 2.5 V | — |
| I/O Supply Voltage | 3.3 V (5 V-tolerant inputs via VCCIO) | — |
| Propagation Delay (worst case) | 0.6 ns | — |
| Рабочая температура | 0 °C to 70 °C (commercial) | — |
| Configuration | SRAM-based, in-system reprogrammable | — |
| JTAG / IEEE 1149.1 | Yes | — |
| Статус RoHS | compliant (lead-free FBGA) | — |
| Статус жизненного цикла | Obsolete (NRND per Intel/Altera PCN history) | — |
| Family | — | FLEX 10KE |
| Total Gates | — | 100,000 |
| Embedded Memory (EAB) | — | 49,152 bits (12 EABs) |
| Logic Array Blocks (LABs) | — | 624 |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | — | 200 MHz |
| Speed Grade | — | -3 (fastest commercial bin) |
| Temperature Grade | — | Commercial (0 °C to +70 °C) |
| Configuration Method | — | SRAM (external EPROM/Flash/JTAG required at power-up) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free) |