EPF10K50VRI240-4N vs EPF10K50VRC240-3N Comparaison
Comparaison détaillée côte à côte de EPF10K50VRI240-4N par Altera et EPF10K50VRC240-3N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EPF10K50VRI240-4N | EPF10K50VRC240-3N |
|---|---|---|
| Marque | Altera | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | NRND | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $49,95 | $58,75 |
| Series | FLEX 10K | FLEX 10K |
| Family | FLEX 10K (Altera) | FLEX 10K (Altera / Intel) |
| Logic Elements / Cells | 2880 | — |
| Total RAM Bits | 20480 | — |
| Typical Gate Count | 50000 gates | — |
| Number of LABs/CLBs | 360 | — |
| Number of Logic Elements | [DATA_NEEDED: logic element breakdown per LAB] | — |
| Number of EABs | 10 | — |
| User I/O Pins | 189 | — |
| Core Supply Voltage (VCCINT) | 3.0 V to 3.6 V (nominal 3.3 V) | — |
| I/O Supply Voltage (VCCIO) | 2.5 V / 3.3 V / 5.0 V compatible | — |
| Maximum Internal Frequency | 125 MHz | — |
| Internal PLL Reference | 66.67 MHz | — |
| Process Technology | 0.42 µm CMOS, SRAM-based | 0.42 µm CMOS, SRAM-based |
| Propagation Delay | 0.6 ns | 0.6 ns (per digchip datasheet snippet) |
| Plage de température de fonctionnement | -40 °C to +85 °C (industrial) | — |
| Boîtier | 240-BFQFP / RQFP, exposed pad | 240-RQFP (RQFP / Power QFP) with exposed pad |
| Type de montage | Surface Mount | Surface Mount |
| Configuration Interface | JTAG (IEEE 1149.1), ByteBlasterMV, BitBlaster | — |
| Speed Grade | -4 | -3 |
| Statut RoHS | Compliant (lead-free RQFP variant) | [DATA_NEEDED: confirm against manufacturer declaration] |
| Typical Gates | — | 50,000 |
| Logic Cells / Logic Elements | — | 2,880 |
| Logic Array Blocks (LABs) | — | 360 |
| Embedded Array Bits | — | 20,480 bits (EABs) |
| Maximum User I/O | — | 189 |
| Core Voltage | — | 3.3 V |
| Internal Frequency (max) | — | 125 MHz |
| Température de fonctionnement | — | 0 °C to +70 °C (Commercial) |
| Configuration Method | — | SRAM, in-system programmable via JTAG / serial PROM |