EPF10K50VRI240-4N vs EPF10K50VRC240-3N Comparação
Comparação detalhada lado a lado de EPF10K50VRI240-4N por Altera e EPF10K50VRC240-3N por Intel. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | EPF10K50VRI240-4N | EPF10K50VRC240-3N |
|---|---|---|
| Marca | Altera | Intel |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | NRND | NRND |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $49,95 | $58,75 |
| Series | FLEX 10K | FLEX 10K |
| Family | FLEX 10K (Altera) | FLEX 10K (Altera / Intel) |
| Logic Elements / Cells | 2880 | — |
| Total RAM Bits | 20480 | — |
| Typical Gate Count | 50000 gates | — |
| Number of LABs/CLBs | 360 | — |
| Number of Logic Elements | [DATA_NEEDED: logic element breakdown per LAB] | — |
| Number of EABs | 10 | — |
| User I/O Pins | 189 | — |
| Core Supply Voltage (VCCINT) | 3.0 V to 3.6 V (nominal 3.3 V) | — |
| I/O Supply Voltage (VCCIO) | 2.5 V / 3.3 V / 5.0 V compatible | — |
| Maximum Internal Frequency | 125 MHz | — |
| Internal PLL Reference | 66.67 MHz | — |
| Process Technology | 0.42 µm CMOS, SRAM-based | 0.42 µm CMOS, SRAM-based |
| Propagation Delay | 0.6 ns | 0.6 ns (per digchip datasheet snippet) |
| Faixa de temperatura de operação | -40 °C to +85 °C (industrial) | — |
| Encapsulamento | 240-BFQFP / RQFP, exposed pad | 240-RQFP (RQFP / Power QFP) with exposed pad |
| Tipo de montagem | Surface Mount | Surface Mount |
| Configuration Interface | JTAG (IEEE 1149.1), ByteBlasterMV, BitBlaster | — |
| Speed Grade | -4 | -3 |
| Status RoHS | Compliant (lead-free RQFP variant) | [DATA_NEEDED: confirm against manufacturer declaration] |
| Typical Gates | — | 50,000 |
| Logic Cells / Logic Elements | — | 2,880 |
| Logic Array Blocks (LABs) | — | 360 |
| Embedded Array Bits | — | 20,480 bits (EABs) |
| Maximum User I/O | — | 189 |
| Core Voltage | — | 3.3 V |
| Internal Frequency (max) | — | 125 MHz |
| Temperatura de operação | — | 0 °C to +70 °C (Commercial) |
| Configuration Method | — | SRAM, in-system programmable via JTAG / serial PROM |