IAUA210N10S5N024AUMA1 vs IPC100N04S5L1R5ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUA210N10S5N024AUMA1 par Infineon et IPC100N04S5L1R5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUA210N10S5N024AUMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,65 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS-5 40 V |
| Technology | MOSFET (Metal Oxide), N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tj | 210 A | — |
| Continuous Drain Current (ID) @ TC=25°C | [DATA_NEEDED: ID at TC=25°C] | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate Charge Qg (typ) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Power Dissipation (PD) @ TC=25°C | 238 W | — |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) | -55C to +175C |
| Boîtier | PG-HSOF-5-4 (7×8 mm² sTOLL) | PG-TDSON-8-34 (SS08 leadless) |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Statut RoHS | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |