IAUA210N10S5N024AUMA1 vs IPC100N04S5L1R5ATMA1 对比

详细并排对比 IAUA210N10S5N024AUMA1 出自 Infineon 和 IPC100N04S5L1R5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA210N10S5N024AUMA1 IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 ✓ 量产中
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 量产中

规格对比

参数 IAUA210N10S5N024AUMA1 IPC100N04S5L1R5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.65 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS-5 40 V
Technology MOSFET (Metal Oxide), N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tj 210 A —
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C] —
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value] —
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V] —
Power Dissipation (PD) @ TC=25°C 238 W —
工作温度范围 -55°C to +175°C (TJ) -55C to +175C
封装 PG-HSOF-5-4 (7×8 mm² sTOLL) PG-TDSON-8-34 (SS08 leadless)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant Compliant (Green Product)
Lead-Free Yes —
MSL 等级 [DATA_NEEDED: MSL rating] MSL1 (260C peak reflow)
Avalanche Energy Rated Yes (per datasheet) —
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

数据手册与资源

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