IAUC100N04S6L014ATMA1 vs IAUC120N04S6L012ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC100N04S6L014ATMA1 par Infineon et IAUC120N04S6L012ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActifInfineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC100N04S6L014ATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,72 | $1,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | OptiMOS 6 40V |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Plage de température de fonctionnement | -55C to +175C | -55 °C to +175 °C (junction) |
| Boîtier | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Type de montage | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | — | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC | — | 115 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Delivery Form | — | Tape & Reel |