IAUC100N04S6L014ATMA1 vs IAUC120N04S6L012ATMA1 Сравнение
Подробное сравнение бок о бок IAUC100N04S6L014ATMA1 от Infineon и IAUC120N04S6L012ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ АктивенInfineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC100N04S6L014ATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,72 | $1,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | OptiMOS 6 40V |
| Тип транзистора | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Диапазон рабочих температур | -55C to +175C | -55 °C to +175 °C (junction) |
| Корпус | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | — | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC | — | 115 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Delivery Form | — | Tape & Reel |