IAUC100N10S5L040ATMA1 vs IAUC100N10S5N040ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC100N10S5L040ATMA1 par Infineon et IAUC100N10S5N040ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ ActifInfineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC100N10S5L040ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,94 | $1,62 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOST 5 Power-Transistor (IAUC) | — |
| Type de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | 400 A |
| On-State Resistance RDS(on) max | 4 mOhm | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| Continuous Power Dissipation (Tc) | 167 W | — |
| Boîtier | PG-TDSON-8-34 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55 C to +175 C (junction) | -55C to +175C (junction) |
| MSL Moisture Sensitivity | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| Avalanche Tested | 100% production avalanche tested | — |
| AOI Compatibility | Feasible for automatic optical inspection | Feasible for Automatic Optical Inspection |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-5 |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| Niveau MSL | — | MSL1 (up to 260C peak reflow) |
| Avalanche Rating | — | 100% Avalanche tested |
| Statut RoHS | — | Compliant |