IAUC100N10S5L040ATMA1 vs IAUC100N10S5N040ATMA1 对比

详细并排对比 IAUC100N10S5L040ATMA1 出自 Infineon 和 IAUC100N10S5N040ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 ✓ 量产中
Infineon
IAUC100N10S5N040ATMA1 IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 ✓ 量产中

规格对比

参数 IAUC100N10S5L040ATMA1 IAUC100N10S5N040ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.94 $1.62
Manufacturer Infineon Technologies —
Part Family OptiMOST 5 Power-Transistor (IAUC) —
晶体管类型 N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 400 A 400 A
On-State Resistance RDS(on) max 4 mOhm —
Gate Threshold Voltage VGS(th) Logic Level —
Continuous Power Dissipation (Tc) 167 W —
封装 PG-TDSON-8-34 (SuperSO8 5x6 mm) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +175 C (junction) -55C to +175C (junction)
MSL Moisture Sensitivity MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q100 qualified
Avalanche Tested 100% production avalanche tested —
AOI Compatibility Feasible for automatic optical inspection Feasible for Automatic Optical Inspection
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS-5
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
MSL 等级 — MSL1 (up to 260C peak reflow)
Avalanche Rating — 100% Avalanche tested
RoHS 状态 — Compliant

数据手册与资源

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