IAUC120N04S6N009ATMA1 vs IAUCN04S7L042GATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC120N04S6N009ATMA1 par Infineon et IAUCN04S7L042GATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ ActifInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC120N04S6N009ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,60 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | — |
| Polarity / Channel Type | N-Channel | N-Channel enhancement mode |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 120 A | — |
| Courant de drain pulsé | [DATA_NEEDED: pulsed I_D value] | — |
| R_DS(on) max @ V_GS=10V | 0.9 mΩ | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | — |
| Power Dissipation (Tc) | 150 W | — |
| Thermal Resistance R_thJC max | 1.0 K/W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | — |
| Boîtier | PG-TDSON-8-33 (5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Type de montage | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 | — |
| Niveau MSL | 1 | 1 |
| RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | — |
| Product Family | — | OptiMOS 7 40V |
| Technology | — | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Plage de température de fonctionnement | — | -55C to +175C (Tj) |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Statut RoHS | — | Compliant |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |