IAUC60N04S6L030HATMA1 vs BSZ100N03MSGATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC60N04S6L030HATMA1 par Infineon et BSZ100N03MSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ ActifInfineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC60N04S6L030HATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,94 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | Single with built-in body diode |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Boîtier | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TSDSON-8 (5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| Statut RoHS | Compliant | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Part Family | — | OptiMOS 25V / 30V |
| Type de transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA | — | 10 A |
| Continuous Drain Current (ID) at TC | — | 40 A |
| Power Dissipation (PD) at TA | — | 2.1 W |
| Power Dissipation (PD) at TC | — | 30 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet] |
| Technology | — | Trench MOSFET (OptiMOS) |
| Terminal Finish | — | Tin (Pb-free) |
| Plage de température de fonctionnement | — | -55C to +150C (junction) |
| Qualification | — | JEDEC - target application qualified |
| Avalanche Tested | — | 100% (per JEDEC) |
| RoHS Compliance | — | Compliant (Pb-free plating) |
| Sans halogène | — | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | — | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | — | [DATA_NEEDED: see datasheet] |