IAUC60N04S6L030HATMA1 vs BSZ100N03MSGATMA1 Сравнение
Подробное сравнение бок о бок IAUC60N04S6L030HATMA1 от Infineon и BSZ100N03MSGATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ АктивенInfineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC60N04S6L030HATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,94 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | Single with built-in body diode |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| Рабочая температура перехода | -55 C to +175 C | — |
| Корпус | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TSDSON-8 (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| Статус RoHS | Compliant | — |
| Уровень MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Part Family | — | OptiMOS 25V / 30V |
| Тип транзистора | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA | — | 10 A |
| Continuous Drain Current (ID) at TC | — | 40 A |
| Power Dissipation (PD) at TA | — | 2.1 W |
| Power Dissipation (PD) at TC | — | 30 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet] |
| Technology | — | Trench MOSFET (OptiMOS) |
| Terminal Finish | — | Tin (Pb-free) |
| Диапазон рабочих температур | — | -55C to +150C (junction) |
| Qualification | — | JEDEC - target application qualified |
| Avalanche Tested | — | 100% (per JEDEC) |
| RoHS Compliance | — | Compliant (Pb-free plating) |
| Без галогенов | — | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | — | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | — | [DATA_NEEDED: see datasheet] |