IAUC60N04S6N031HATMA1 vs IAUC60N04S6N044ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC60N04S6N031HATMA1 par Infineon et IAUC60N04S6N044ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ ActifInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC60N04S6N031HATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,95 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Plage de température de fonctionnement | -55 °C to +175 °C (Tj) | — |
| Boîtier | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified (IAUC prefix) |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Technology | — | OptiMOS-6 N-channel trench MOSFET |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| Température de jonction en fonctionnement | — | -55°C to +175°C |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |