IAUC60N04S6N031HATMA1 vs IAUC60N04S6N044ATMA1 Comparação
Comparação detalhada lado a lado de IAUC60N04S6N031HATMA1 por Infineon e IAUC60N04S6N044ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ AtivoInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUC60N04S6N031HATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,95 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Faixa de temperatura de operação | -55 °C to +175 °C (Tj) | — |
| Encapsulamento | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified (IAUC prefix) |
| Status RoHS | Compliant | Compliant |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Technology | — | OptiMOS-6 N-channel trench MOSFET |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| Temperatura de junção de operação | — | -55°C to +175°C |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |