IAUCN04S6N009TATMA1 vs ISC080N10NM6ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUCN04S6N009TATMA1 par Infineon et ISC080N10NM6ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IAUCN04S6N009TATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,71 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40 V | — |
| Part Number | IAUCN04S6N009T | — |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, at Tj) | 330 A | — |
| Power Dissipation (PD, at Tc) | 178 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Boîtier | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8 FL (TDSON EP) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | — |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Plage de température de fonctionnement | — | -55°C to +175°C (TJ max, per datasheet) |
| Niveau MSL | — | 1 (per JEDEC J-STD-020, per datasheet) |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Sans halogène | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |