IAUCN04S7N015GATMA1 vs IAUCN04S7L050HATMA1 Comparaison
Comparaison détaillée côte à côte de IAUCN04S7N015GATMA1 par Infineon et IAUCN04S7L050HATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUCN04S7N015GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,21 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 165 A (Tc) | — |
| Power Dissipation (P_D) | 96 W (Tc) | — |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Boîtier | PG-THSOG-4-1 (SSO4G 5x6) surface mount | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Température de jonction en fonctionnement | -55C to +175C | -55 °C to +175 °C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (family-level, automotive grade) |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Statut RoHS | Compliant | Compliant |
| Type de montage | Surface Mount (IMS-compatible source-down) | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |