IAUCN04S7N015GATMA1 vs IAUCN04S7L050HATMA1 对比
详细并排对比 IAUCN04S7N015GATMA1 出自 Infineon 和 IAUCN04S7L050HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N015GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.21 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 165 A (Tc) | — |
| Power Dissipation (P_D) | 96 W (Tc) | — |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| 封装 | PG-THSOG-4-1 (SSO4G 5x6) surface mount | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 工作结温 | -55C to +175C | -55 °C to +175 °C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (family-level, automotive grade) |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| RoHS 状态 | Compliant | Compliant |
| 安装类型 | Surface Mount (IMS-compatible source-down) | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |