IAUCN10S5L110TATMA1 vs IAUCN10S7L290TATMA1 Comparaison
Comparaison détaillée côte à côte de IAUCN10S5L110TATMA1 par Infineon et IAUCN10S7L290TATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ ActifInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUCN10S5L110TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,08 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) at Tc | 88 W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Boîtier | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | 100% Avalanche Tested | Yes |
| Automotive Qualification | AEC-Q101 Extended Qualification | AEC-Q100 qualified |
| Statut RoHS | Compliant | — |
| Product Family | — | OptiMOS™ 7 |
| Type de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |