IAUCN10S5L110TATMA1 vs IAUCN10S7L290TATMA1 Comparação
Comparação detalhada lado a lado de IAUCN10S5L110TATMA1 por Infineon e IAUCN10S7L290TATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AtivoInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUCN10S5L110TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,08 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) at Tc | 88 W | — |
| Temperatura de junção de operação | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Encapsulamento | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | 100% Avalanche Tested | Yes |
| Automotive Qualification | AEC-Q101 Extended Qualification | AEC-Q100 qualified |
| Status RoHS | Compliant | — |
| Product Family | — | OptiMOS™ 7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |