IAUCN10S7L290TATMA1 vs IAUCN10S5L110TATMA1 Comparaison
Comparaison détaillée côte à côte de IAUCN10S7L290TATMA1 par Infineon et IAUCN10S5L110TATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ ActifInfineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUCN10S7L290TATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,36 | $2,08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: gate-source voltage rating] |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -55 °C to +175 °C |
| Boîtier | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 Extended Qualification |
| Niveau MSL | 1 (per JEDEC J-STD-020) | MSL1 (260°C peak reflow) |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | 100% Avalanche Tested |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Series | — | OptiMOS 5 |
| Technology | — | N-Channel MOSFET, Trench, Logic Level |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Power Dissipation (PD) at Tc | — | 88 W |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Statut RoHS | — | Compliant |