IAUCN10S7L290TATMA1 vs IAUCN10S5L110TATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L290TATMA1 by Infineon and IAUCN10S5L110TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveInfineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L290TATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $2.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: gate-source voltage rating] |
| Continuous Drain Current (ID) at TC=25Β°C | 27 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) at TC=25Β°C | 45 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 Extended Qualification |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (260Β°C peak reflow) |
| RoHS Compliance | Compliant | β |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | 100% Avalanche Tested |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | β |
| Series | β | OptiMOS 5 |
| Technology | β | N-Channel MOSFET, Trench, Logic Level |
| Continuous Drain Current (ID) at Tj | β | 61 A |
| On-Resistance RDS(on) max at VGS=10V | β | 11.3 mΞ© |
| Power Dissipation (PD) at Tc | β | 88 W |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| RoHS Status | β | Compliant |