IGD06N60TATMA1 vs IGD08N120S7ATMA1 Comparaison
Comparaison détaillée côte à côte de IGD06N60TATMA1 par Infineon et IGD08N120S7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IGD06N60TATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Transistors | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,62 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 12 A | — |
| Continuous Collector Current (IC) at TC=100°C | 6 A | — |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | — |
| Maximum Power Dissipation (Ptot) | 88 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V | — |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) | — |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | — |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | — |
| Température de jonction en fonctionnement | -40 °C to +175 °C | -40C to +175C (industry grade) |
| Storage Temperature | -55 °C to +150 °C | — |
| Boîtier | PG-TO252-3-11 (DPAK / TO-252) | PG-TO252-3 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |