IGLD60R070D1AUMA3 vs ISC015N06NM5ATMA1 Comparaison
Comparaison détaillée côte à côte de IGLD60R070D1AUMA3 par Infineon et ISC015N06NM5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IGLD60R070D1AUMA3 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,10 | $0,62 |
| Technology | GaN HEMT (enhancement-mode, normally-off) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc) | 15 A | — |
| Power Dissipation (PD, Tc) | 114 W | — |
| On-Resistance (RDS(on)) | 70 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | — |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | — |
| Boîtier | PG-LSON-8-1 (LSON-8 with exposed pad) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 3 | — |
| Sans halogène | Yes | — |
| Statut RoHS | Compliant | Compliant |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | — |
| Series | CoolGaN™ | — |
| Polarity | N-Channel | — |
| Packaging | Tape & Reel | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Plage de température de fonctionnement | — | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | — | 1 |