IGLD60R070D1AUMA3 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IGLD60R070D1AUMA3 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLD60R070D1AUMA3
IGLD60R070D1AUMA3 - 600V 70mΞ© CoolGaNβ’ eMode GaN FET | Infineon
IGLD60R070D1AUMA3 β Active
Specification Comparison
| Parameter | IGLD60R070D1AUMA3 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.10 | $0.62 |
| Technology | GaN HEMT (enhancement-mode, normally-off) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc) | 15 A | β |
| Power Dissipation (PD, Tc) | 114 W | β |
| On-Resistance (RDS(on)) | 70 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | β |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | β |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | β |
| Package | PG-LSON-8-1 (LSON-8 with exposed pad) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 3 | β |
| Halogen Free | Yes | β |
| RoHS Status | Compliant | Compliant |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | β |
| Series | CoolGaNβ’ | β |
| Polarity | N-Channel | β |
| Packaging | Tape & Reel | β |
| Factory Pack Quantity | 3000 | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | β | 1 |