IPB025N10N3GATMA1 vs IPB021N10NM5LF2ATMA1 Comparaison
Comparaison détaillée côte à côte de IPB025N10N3GATMA1 par Infineon et IPB021N10NM5LF2ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ ActifInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPB025N10N3GATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,74 | $2,75 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | — |
| Input Capacitance (Ciss) | 2.58 nF | — |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | — |
| Boîtier | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +175C (junction) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Niveau MSL | 1 (unlimited) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |