IPB025N10N3GATMA1 vs IPB021N10NM5LF2ATMA1 对比
详细并排对比 IPB025N10N3GATMA1 出自 Infineon 和 IPB021N10NM5LF2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ 量产中规格对比
| 参数 | IPB025N10N3GATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.74 | $2.75 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | — |
| Input Capacitance (Ciss) | 2.58 nF | — |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | — |
| 封装 | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| MSL 等级 | 1 (unlimited) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |