IPB027N10N3GATMA1 vs IRFS7530TRLPBF Comparaison
Comparaison détaillée côte à côte de IPB027N10N3GATMA1 par Infineon et IRFS7530TRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPB027N10N3GATMA1 | IRFS7530TRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $1,72 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) | -55 °C to +175 °C (Tj) |
| Boîtier | PG-TO263-3 (D2PAK) | — |
| Type de montage | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| Statut RoHS | Compliant | — |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFS7530TRLPBF |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge Qg Typ | — | [DATA_NEEDED: typical gate charge] |
| Total Power Dissipation (PD) at Tc=25°C | — | 375 W |
| Boîtier / Format | — | PG-TO263-2 (D2PAK, TO-263) |
| Packaging | — | Tape & Reel (TR) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Pin Configuration | — | 3-Pin (Gate, Drain tab, Source) |
| Series | — | StrongIRFET™ |