IPB027N10N3GATMA1 vs IRFS7530TRLPBF Сравнение
Подробное сравнение бок о бок IPB027N10N3GATMA1 от Infineon и IRFS7530TRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPB027N10N3GATMA1 | IRFS7530TRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,62 | $1,72 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| Диапазон рабочих температур | -55°C to +175°C (TJ) | -55 °C to +175 °C (Tj) |
| Корпус | PG-TO263-3 (D2PAK) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| Статус RoHS | Compliant | — |
| Уровень MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFS7530TRLPBF |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge Qg Typ | — | [DATA_NEEDED: typical gate charge] |
| Total Power Dissipation (PD) at Tc=25°C | — | 375 W |
| Корпус / Типоразмер | — | PG-TO263-2 (D2PAK, TO-263) |
| Packaging | — | Tape & Reel (TR) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Pin Configuration | — | 3-Pin (Gate, Drain tab, Source) |
| Series | — | StrongIRFET™ |