IPB072N15N3GATMA1 vs IPB107N20N3GATMA1 Comparaison
Comparaison détaillée côte à côte de IPB072N15N3GATMA1 par Infineon et IPB107N20N3GATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPB072N15N3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,84 | $1,18 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (V_DS) | 150 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 100 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed I_DM] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W | — |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | — |
| R_DS(on) max at VGS=10V | [DATA_NEEDED: max R_DS(on) at VGS=10V] | — |
| Gate-Source Voltage (V_GS) max | +/-20 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at VGS=10V] | — |
| Plage de température de fonctionnement | -55 C to +175 C | [DATA_NEEDED: Tj max and operating range] |
| Boîtier | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) | PG-TO263-3 (D2PAK) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) | — |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) | — |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 88 A |
| Maximum Power Dissipation (Pd) at Tc | — | 300 W |
| On-Resistance RDS(on) at VGS=10V | — | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Nombre de broches | — | 3 (Drain, Source, Gate) + Tab |