IPB100N04S4H2ATMA1 vs IPC100N04S51R7ATMA1 Comparaison
Comparaison détaillée côte à côte de IPB100N04S4H2ATMA1 par Infineon et IPC100N04S51R7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IPB100N04S4H2ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,42 | $0,82 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Température de jonction en fonctionnement | -55C to +175C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Boîtier | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8-34 (SS08 leadless) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (up to 260C peak reflow) | MSL1 (260 °C peak reflow) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Type de transistor | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Statut RoHS | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |