IPB100N04S4H2ATMA1 vs IPC100N04S51R7ATMA1 对比

详细并排对比 IPB100N04S4H2ATMA1 出自 Infineon 和 IPC100N04S51R7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ 量产中

规格对比

参数 IPB100N04S4H2ATMA1 IPC100N04S51R7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.42 $0.82
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-T2 (trench gate) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
工作结温 -55C to +175C -55 °C to +175 °C
Storage Temperature [DATA_NEEDED: storage temp range] —
封装 PG-TO263-3-2 (D2PAK-2) Surface Mount PG-TDSON-8-34 (SS08 leadless)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260C peak reflow) MSL1 (260 °C peak reflow)
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant (Green Product) —
Manufacturer — Infineon Technologies
Series — OptiMOS-5
晶体管类型 — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
RoHS 状态 — Compliant (Green Product)
Built-in Body Diode — Yes

数据手册与资源

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