IPB110P06LMATMA1 vs IGI65D1414A3MSXUMA1 Comparaison
Comparaison détaillée côte à côte de IPB110P06LMATMA1 par Infineon et IGI65D1414A3MSXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPB110P06LMATMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,31 | $4,95 |
| FET Type | P-Channel | — |
| Technology | OptiMOS (trench MOSFET) | Enhancement-mode GaN HEMT (eMode) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Plage de température de fonctionnement | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Boîtier / Format | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Type de montage | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| Statut RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN™ HEMT |
| Configuration | — | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Boîtier | — | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| Niveau MSL | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |