IPB110P06LMATMA1 vs IGI65D1414A3MSXUMA1 对比

详细并排对比 IPB110P06LMATMA1 出自 Infineon 和 IGI65D1414A3MSXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ 量产中

规格对比

参数 IPB110P06LMATMA1 IGI65D1414A3MSXUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.31 $4.95
FET Type P-Channel —
Technology OptiMOS (trench MOSFET) Enhancement-mode GaN HEMT (eMode)
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) at TC=25C -100 A —
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
工作温度范围 -55 C to +175 C (TJ) [DATA_NEEDED: operating temperature range]
封装 / 外壳 PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) —
安装类型 Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
RoHS 状态 Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — CoolGaN™ HEMT
Configuration — Half-Bridge (2 FETs in QFN-32, high-side + low-side)
Drain-Source Voltage (V_DS, max) — 650 V
On-Resistance (R_DS(on), typ) — 140 mΩ per FET
Continuous Drain Current — 13.7 A (per Newark listing)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
封装 — PG-TIQFN-32-1 (QFN-32, 6x8 mm)
Total Gate Charge (Q_G, typ) — [DATA_NEEDED: Q_G total]
Output Charge (Q_OSS) — [DATA_NEEDED: Q_OSS value]
Reverse Recovery Charge (Q_RR) — 0 nC (intrinsic to GaN HEMT, no body diode recovery)
Thermal Resistance (R_thJA) — [DATA_NEEDED: R_thJA value]
Typical Applications — AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting
MSL 等级 — [DATA_NEEDED: MSL level]
RoHS Compliance — Compliant

数据手册与资源

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