IPC50N04S5L5R5ATMA1 vs IAUC60N10S5L110ATMA1 Comparaison
Comparaison détaillée côte à côte de IPC50N04S5L5R5ATMA1 par Infineon et IAUC60N10S5L110ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPC50N04S5L5R5ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,36 | $0,66 |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Plage de température de fonctionnement | -55 °C to +175 °C | [DATA_NEEDED: min/max operating temperature] |
| Boîtier | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-33 (TDSON-8 Single) |
| Type de montage | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™-5 |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | — | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | — | Yes (RoHS compliant per LCSC listing) |
| Packing Code | — | ATMA1 (Tape & Reel) |
| Niveau MSL | — | 1 (per LCSC datasheet snippet) |
| Sans halogène | — | Yes (per Infineon product classification) |
| Customer Info / FGR | — | J52 (per Infineon product data) |