IPC50N04S5L5R5ATMA1 vs IAUC60N10S5L110ATMA1 Comparison
Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and IAUC60N10S5L110ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveInfineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β ActiveSpecification Comparison
| Parameter | IPC50N04S5L5R5ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.66 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc) | 50 A | β |
| Maximum Drain Current (silicon-limited, 25 Β°C) | 60 A | β |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΞ© | β |
| Gate Threshold VGS(th) | Logic Level (enhancement at β€ 4.5 V VGS) | β |
| Power Dissipation (Tc) | 42 W | β |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | [DATA_NEEDED: min/max operating temperature] |
| Package | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-33 (TDSON-8 Single) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| MSL (Moisture Sensitivity Level) | MSL1 | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Avalanche Rating | 100 % Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOSβ’-5 |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | β | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | β | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | β | 11 mΞ© |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | β | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | β | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | β | Yes (RoHS compliant per LCSC listing) |
| Packing Code | β | ATMA1 (Tape & Reel) |
| MSL Level | β | 1 (per LCSC datasheet snippet) |
| Halogen-Free | β | Yes (per Infineon product classification) |
| Customer Info / FGR | β | J52 (per Infineon product data) |