IPL60R285P7AUMA1 vs IAUCN08S7L033ATMA1 Comparaison
Comparaison détaillée côte à côte de IPL60R285P7AUMA1 par Infineon et IAUCN08S7L033ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPL60R285P7AUMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,88 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | Automotive OptiMOS 7 |
| Technology | Superjunction (SJ) N-channel MOSFET | OptiMOS 7 trench MOSFET |
| Drain-to-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 285 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Output Capacitance (Coss) typ | [DATA_NEEDED: Coss value] | — |
| Maximum Power Dissition (PD) at Tc=25C | 59 W | — |
| Plage de température de fonctionnement | -55C to +150C (junction) | -55°C to +175°C (TJ) |
| Boîtier / Format | PG-VSON-4 (surface mount) | — |
| Type de montage | Surface Mount | Surface Mount |
| Configuration | Single N-channel, 4 pins (Gate, Drain, Source, Tab) | — |
| Statut RoHS | Compliant | Compliant |
| Gate ESD Protection | Integrated | — |
| Niveau MSL | 1 (per Infineon PG-VSON-4 family) | 1 (per JEDEC J-STD-020, typical for this package) |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Boîtier | — | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |