IPL60R285P7AUMA1 vs IAUCN08S7L033ATMA1 비교

다음의 상세 나란히 비교: IPL60R285P7AUMA1 제조: Infineon 및 IAUCN08S7L033ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 활성

사양 비교

파라미터 IPL60R285P7AUMA1 IAUCN08S7L033ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.88 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 Automotive OptiMOS 7
Technology Superjunction (SJ) N-channel MOSFET OptiMOS 7 trench MOSFET
Drain-to-Source Voltage (V(BR)DSS) 600 V —
Continuous Drain Current (ID) at Tc=25C 13 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] —
On-State Resistance (RDS(on)) max at VGS=10V 285 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Output Capacitance (Coss) typ [DATA_NEEDED: Coss value] —
Maximum Power Dissition (PD) at Tc=25C 59 W —
동작 온도 범위 -55C to +150C (junction) -55°C to +175°C (TJ)
패키지 / 케이스 PG-VSON-4 (surface mount) —
실장 유형 Surface Mount Surface Mount
Configuration Single N-channel, 4 pins (Gate, Drain, Source, Tab) —
RoHS 상태 Compliant Compliant
Gate ESD Protection Integrated —
MSL 레벨 1 (per Infineon PG-VSON-4 family) 1 (per JEDEC J-STD-020, typical for this package)
트랜지스터 유형 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
패키지 — PG-TDSON-8-34 (SSO8, 5x6 mm²)
Qualification — Automotive Grade (per Infineon datasheet header)

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