IPTG025N15NM6ATMA1 vs IQE220N15NM5ATMA1 Comparaison
Comparaison détaillée côte à côte de IPTG025N15NM6ATMA1 par Infineon et IQE220N15NM5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPTG025N15NM6ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,52 | $0,84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | Trench MOSFET (OptiMOS 5) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 26 A | — |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 395 W | — |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | — |
| Boîtier | PG-HSOG-8-1 (TOLG) | PG-TSON-8-5 (Source-Down) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55 C to +175 C (typical for OptiMOS 6) | — |
| Statut RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | — |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Ta | — | 7 A |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Configuration de sortie | — | Single N-Channel |
| Température de fonctionnement | — | -55C to +150C (junction) |
| Niveau MSL | — | 1 |