IQDH88N06LM5CGSCATMA1 vs IQE031N08LM6CGSCATMA1 Comparaison
Comparaison détaillée côte à côte de IQDH88N06LM5CGSCATMA1 par Infineon et IQE031N08LM6CGSCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQDH88N06LM5CGSCATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,31 | $0,74 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Courant de drain continu (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Dissipation de puissance (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Boîtier | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Statut RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free | — | Yes |