IQDH88N06LM5CGSCATMA1 vs IQE031N08LM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQDH88N06LM5CGSCATMA1 by Infineon and IQE031N08LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveInfineon
IQE031N08LM6CGSCATMA1
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQDH88N06LM5CGSCATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $0.74 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 (trench) | β |
| Drain-Source Voltage (V(BR)DSS) | 60 V | β |
| Continuous Drain Current (Ta=25Β°C) | 42 A | β |
| Continuous Drain Current (Tc=25Β°C) | 447 A | β |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 3 W | β |
| Power Dissipation (Tc=25Β°C) | 333 W | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Package | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 (with exposed pad) | β |
| Cooling | Dual-side cooling capable | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| RoHS Status | Compliant | Compliant |
| Polarity | N-Channel | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS max) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25C | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 127 A |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 125 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | β | Logic-level |
| Avalanche Tested | β | 100% avalanche tested |
| Lead-Free | β | Yes |