IQE018N06NM6CGATMA1 vs IQE031N08LM6CGSCATMA1 Comparaison
Comparaison détaillée côte à côte de IQE018N06NM6CGATMA1 par Infineon et IQE031N08LM6CGSCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE018N06NM6CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,21 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 (40 V to 100 V) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| Boîtier | PG-TTFN-9-3 (TOLL/TTFN) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +175C (junction) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| RoHS Compliance | Compliant | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Niveau MSL | — | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |