IQE018N06NM6CGATMA1 vs IQE031N08LM6CGSCATMA1 对比
详细并排对比 IQE018N06NM6CGATMA1 出自 Infineon 和 IQE031N08LM6CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ 量产中规格对比
| 参数 | IQE018N06NM6CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.21 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 (40 V to 100 V) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| 封装 | PG-TTFN-9-3 (TOLL/TTFN) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| RoHS Compliance | Compliant | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| MSL 等级 | — | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |