IQE031N08LM6CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Comparaison
Comparaison détaillée côte à côte de IQE031N08LM6CGSCATMA1 par Infineon et IQDH88N06LM5CGSCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE031N08LM6CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,74 | $2,31 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 (40 V to 100 V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| Boîtier | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55 C to +175 C (junction, typical for OptiMOS 6) | -55°C to +175°C (TJ) |
| Avalanche Tested | 100% avalanche tested | — |
| Niveau MSL | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Type de transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Courant de drain continu (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Dissipation de puissance (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Nombre de broches | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| Polarity | — | N-Channel |
| Configuration | — | Single |