IQE031N08LM6CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE031N08LM6CGSCATMA1 by Infineon and IQDH88N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE031N08LM6CGSCATMA1
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveInfineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE031N08LM6CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $2.31 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 (40 V to 100 V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS max) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25C | 18 A | β |
| Continuous Drain Current (ID) at Tc | 127 A | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc | 125 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | β |
| Gate Drive Level | Logic-level | β |
| Package | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (junction, typical for OptiMOS 6) | -55Β°C to +175Β°C (TJ) |
| Avalanche Tested | 100% avalanche tested | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | β | 60 V |
| Continuous Drain Current (Ta=25Β°C) | β | 42 A |
| Continuous Drain Current (Tc=25Β°C) | β | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | β | 0.86 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 3 W |
| Power Dissipation (Tc=25Β°C) | β | 333 W |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | β | [DATA_NEEDED: Qg typical nC] |
| Pin Count | β | 9 (with exposed pad) |
| Cooling | β | Dual-side cooling capable |
| Polarity | β | N-Channel |
| Configuration | β | Single |